박막 트랜지스터

Thin film transistor

Abstract

The present invention relates to a thin film transistor. The thin film transistor according to one embodiment of the present invention includes oxide semiconductor. According to one embodiment of the present invention, the oxide semiconductor includes at least one among zinc oxide, zinc-tin oxide, zinc-indium oxide, indium oxide, titanium oxide, indium-gallium-zinc oxide, and indium-gallium-tin oxide.
박막 트랜지스터를 제공한다. 본 발명의 일실시예에 따른 박막 트랜지스터는 산화물 반도체를 포함하고, 상기 산화물 반도체의 산소 결함 함량은 상기 산화물 반도체 내 포함된 산소 함량 대비 0.15 이하이다.

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